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dc.contributor.authorChou, Bo-Tsunen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.date.accessioned2015-12-02T02:59:13Z-
dc.date.available2015-12-02T02:59:13Z-
dc.date.issued2015-05-15en_US
dc.identifier.issn0733-8724en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2015.2397889en_US
dc.identifier.urihttp://hdl.handle.net/11536/127923-
dc.description.abstractWe propose and analyze a bottom-emitting metallic nanolaser with a cavity size smaller than one wavelength in three dimensions. We optimize the nanolaser performance by adjusting the thickness of SiNx insulator layer, pillar radius, p-cladding, and n-cladding layers. With a proper design, we can achieve the TE01 mode lasing with an extremely small effective mode volume of 0.135 (lambda(0) /n)(3) and an ultra low threshold gain of 247 cm(-1). The nanolaser is integrated with a silicon-on-insulator waveguide through a bottom-connected grating coupler. By properly modifying the grating coupler period, fill factor, shift position, and grating height, a high coupling efficiency of 88.5% can be acquired.en_US
dc.language.isoen_USen_US
dc.subjectLaser cavity resonatorsen_US
dc.subjectnanolaseren_US
dc.subjectoptical waveguidesen_US
dc.subjectphotonic integrated circuitsen_US
dc.subjectquantum well lasersen_US
dc.subjectsilicon-on-insulatoren_US
dc.titleDesign of Bottom-Emitting Metallic Nanolasers Integrated With Silicon-On-Insulator Waveguidesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JLT.2015.2397889en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.citation.volume33en_US
dc.citation.issue10en_US
dc.citation.spage2087en_US
dc.citation.epage2092en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000357161400009en_US
dc.citation.woscount1en_US
Appears in Collections:Articles