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dc.contributor.authorWang, Kuang-Yuen_US
dc.contributor.authorTsai, Wan-Linen_US
dc.contributor.authorYang, Po-Yuen_US
dc.contributor.authorChou, Chia-Hsinen_US
dc.contributor.authorLi, Yu-Renen_US
dc.contributor.authorLiao, Chan-Yuen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2015-12-02T02:59:13Z-
dc.date.available2015-12-02T02:59:13Z-
dc.date.issued2015-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.54.04DL01en_US
dc.identifier.urihttp://hdl.handle.net/11536/127936-
dc.description.abstractThe high-performance pH-sensing membrane of extended-gate field-effect transistors (EGFET) composed of high-conductivity horizontally aligned carbon nanotube thin films (HACNTFs) after oxygen plasma treatment is successfully demonstrated. The 10-mu m-wide catalytic metal lines with 60 mu m interspace produced CNT vertical plates, and the plates were mechanically pulled down and densified to form HACNTFs. A large amount of oxygen-containing functional groups are decorated on the CNTs after the oxygen plasma treatment. These functional groups act as the sensing sites and respond to the H+ or OH- ions in solutions with different pH values. Therefore, these functionalized HACNTFs as pH-EGFET-sensing membranes can achieve a high voltage sensitivity of 40 mV/pH and high current sensitivity of 0.78 mu A(1/2)/pH. Moreover, large linearity of 0.998 is measured in a wide sensing range from pH 1 to 13. These results reveal that the oxygen plasma treatment is an effective way to improve the CNT-sensing characteristics in pH-EGFET sensors. (C) 2015 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEffect of oxygen plasma treatment on horizontally aligned carbon nanotube thin film as pH-sensing membrane of extended-gate field-effect transistoren_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.54.04DL01en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume54en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000357694000120en_US
dc.citation.woscount0en_US
Appears in Collections:Articles