Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, Kuang-Yu | en_US |
dc.contributor.author | Tsai, Wan-Lin | en_US |
dc.contributor.author | Yang, Po-Yu | en_US |
dc.contributor.author | Chou, Chia-Hsin | en_US |
dc.contributor.author | Li, Yu-Ren | en_US |
dc.contributor.author | Liao, Chan-Yu | en_US |
dc.contributor.author | Cheng, Huang-Chung | en_US |
dc.date.accessioned | 2015-12-02T02:59:13Z | - |
dc.date.available | 2015-12-02T02:59:13Z | - |
dc.date.issued | 2015-04-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.54.04DL01 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/127936 | - |
dc.description.abstract | The high-performance pH-sensing membrane of extended-gate field-effect transistors (EGFET) composed of high-conductivity horizontally aligned carbon nanotube thin films (HACNTFs) after oxygen plasma treatment is successfully demonstrated. The 10-mu m-wide catalytic metal lines with 60 mu m interspace produced CNT vertical plates, and the plates were mechanically pulled down and densified to form HACNTFs. A large amount of oxygen-containing functional groups are decorated on the CNTs after the oxygen plasma treatment. These functional groups act as the sensing sites and respond to the H+ or OH- ions in solutions with different pH values. Therefore, these functionalized HACNTFs as pH-EGFET-sensing membranes can achieve a high voltage sensitivity of 40 mV/pH and high current sensitivity of 0.78 mu A(1/2)/pH. Moreover, large linearity of 0.998 is measured in a wide sensing range from pH 1 to 13. These results reveal that the oxygen plasma treatment is an effective way to improve the CNT-sensing characteristics in pH-EGFET sensors. (C) 2015 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effect of oxygen plasma treatment on horizontally aligned carbon nanotube thin film as pH-sensing membrane of extended-gate field-effect transistor | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.7567/JJAP.54.04DL01 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 54 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000357694000120 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |