Full metadata record
DC FieldValueLanguage
dc.contributor.authorYen, Shiang-Shiouen_US
dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorChiou, Pingen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorTung, Chien-Hungen_US
dc.contributor.authorLai, Yu-Chienen_US
dc.contributor.authorLi, Hung-Weien_US
dc.contributor.authorChang, Chih-Pangen_US
dc.contributor.authorLu, Hsueh-Hsingen_US
dc.contributor.authorChuang, Ching-Sangen_US
dc.contributor.authorLin, Yu-Hsinen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2015-12-02T02:59:13Z-
dc.date.available2015-12-02T02:59:13Z-
dc.date.issued2015-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.54.04DF05en_US
dc.identifier.urihttp://hdl.handle.net/11536/127937-
dc.description.abstractIn this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high-and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 degrees C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 x 10(-14)A/mu m at a low operating voltage of 4V. (C) 2015 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleStructural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channelen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.54.04DF05en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume54en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000357694000062en_US
dc.citation.woscount0en_US
Appears in Collections:Articles