完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tse, SC | en_US |
dc.contributor.author | So, SK | en_US |
dc.contributor.author | Yeung, MY | en_US |
dc.contributor.author | Lo, CF | en_US |
dc.contributor.author | Wen, SW | en_US |
dc.contributor.author | Chen, CH | en_US |
dc.date.accessioned | 2014-12-08T15:17:38Z | - |
dc.date.available | 2014-12-08T15:17:38Z | - |
dc.date.issued | 2006-01-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.45.555 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12793 | - |
dc.description.abstract | The charge transport properties of three tertiary-butyl (t-Bu) substituted anthracene derivatives (ADN), critical blue host materials for organic light-emitting diodes (OLEDs), have been investigated experimentally and computationally. From time-of-flight (TOF) measurements, all ADN compounds exhibit ambipolar characters. The hole and electron mobilities are in the range (1-5) x 10(-7) cm(2) V-1 s(-1) Under ail external applied field of about 1 MV cm(-1). Un-substituted ADN has the highest carrier mobilities while heavily t-Bu substituted ADN has the least. The electron and hole conducting properties of are consistent with ab initio calculation, which indicates that the frontier orbitals are localized mainly on the anthracene moiety. t-Bu substitutions in ADN increase the hopping path lengths among the molecules and hence reduce the electron and hole mobilities. The results demonstrate that t-Bu substitution is an effective means of engineering the conductivity of organic charge transporter for OLED applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | anthracene derivative | en_US |
dc.subject | ambipolar | en_US |
dc.subject | carrier mobility | en_US |
dc.title | Experimental and theoretical demonstration on the transport properties of fused ring host materials for organic light-emitting diodes | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1143/JJAP.45.555 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 45 | en_US |
dc.citation.issue | 1B | en_US |
dc.citation.spage | 555 | en_US |
dc.citation.epage | 557 | en_US |
dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
dc.identifier.wosnumber | WOS:000235089100045 | - |
顯示於類別: | 會議論文 |