完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, Yen-Tangen_US
dc.contributor.authorChen, Pei-Lingen_US
dc.contributor.authorChen, Po-Weien_US
dc.contributor.authorHsu, Hung-Jungen_US
dc.contributor.authorHsu, Cheng-Hangen_US
dc.contributor.authorTsai, Chuang-Chuangen_US
dc.date.accessioned2019-04-03T06:38:40Z-
dc.date.available2019-04-03T06:38:40Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn1110-662Xen_US
dc.identifier.urihttp://dx.doi.org/10.1155/2015/382814en_US
dc.identifier.urihttp://hdl.handle.net/11536/127948-
dc.description.abstractEffects of RF power on optical, electrical, and structural properties of mu c-Si1-xGex:H films was reported. Raman and FTIR spectra from mu c-Si1-xGex:H films reflected the variation in microstructure and bonding configuration. Unlike increasing the germane concentration for Ge incorporation, low RF power enhanced Ge incorporation efficiency in mu c-Si1-xGex:H alloy. By decreasing RF power from 100 to 50 W at a fixed reactant gas ratio, the optical bandgap of mu c-Si1-xGex:H was reduced owing to the increase in Ge content from 11.2 to 23.8 at.%, while Ge-related defects and amorphous phase were increased. Consequently, photo conductivity of 1.62 x 10(-5) S/cm was obtained for the mu c-Si1-xGex:H film deposited at 60 W. By applying 0.9 mu m thick mu c-Si1-xGex:H absorber with X-C of 48% and [Ge] of 16.4 at.% in the single-junction cell, efficiency of 6.18% was obtained. The long-wavelength response of mu c-Si1-xGex:H cell was significantly enhanced compared with the mu c-Si:H cell. In the case of tandem cells, 0.24 mu m a-Si:H/0.9 mu m mu c-Si1-xGex:H tandem cell exhibited a comparable spectral response as 0.24 mu m a-Si:H/1.4 mu m mu c-Si:H tandem cell and achieved an efficiency of 9.44%.en_US
dc.language.isoen_USen_US
dc.titleOptimization of mu c-Si1-xGex:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Qualityen_US
dc.typeArticleen_US
dc.identifier.doi10.1155/2015/382814en_US
dc.identifier.journalINTERNATIONAL JOURNAL OF PHOTOENERGYen_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000357468700001en_US
dc.citation.woscount0en_US
顯示於類別:期刊論文


文件中的檔案:

  1. 9539ea99dc5f5cbd05f5481b364246cd.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。