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dc.contributor.authorChen, Shih-Hanen_US
dc.contributor.authorLiu, Hung-Chuanen_US
dc.contributor.authorLee, Chun-Yien_US
dc.contributor.authorGan, Jon-Yiewen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorHwang, Jenn-Changen_US
dc.contributor.authorCheng, Yi-Yunen_US
dc.contributor.authorLyu, Ping-Chiangen_US
dc.date.accessioned2015-12-02T02:59:16Z-
dc.date.available2015-12-02T02:59:16Z-
dc.date.issued2015-09-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2015.05.046en_US
dc.identifier.urihttp://hdl.handle.net/11536/127987-
dc.description.abstractDevice performance of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) has been improved greatly by using bovine serum albumin (BSA) as the top gate dielectric. BSA is a natural protein with acidic and basic amino acid residues, which is easily hydrated in air ambient. A typical a-IGZO TFT with hydrated BSA as the top gate dielectric exhibits a field-effect mobility (mu(FE)) value of 113.5 cm(2) V-1 s(-1) in saturation regime and a threshold voltage (V-TH) value of 0.25 V in air ambient. The excellent device performance can be well explained by the formation of electric double layers (EDLs) near the interfaces of a-IGZO/hydrated BSA and hydrated BSA/gate electrode. The reliability issue of a-IGZO TFTs gated with hydrated BSA has been also investigated by using the life time test without encapsulation. The V-TH value increases and mu(FE,sat) value reduces slightly for the a-IGZO TFT and remain stabilized over 60 days. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjecta-IGZOen_US
dc.subjectBSAen_US
dc.subjectProteinen_US
dc.subjectTFTen_US
dc.subjectEDLen_US
dc.titleHigh performance electric-double-layer amorphous IGZO thin-film transistors gated with hydrated bovine serum albumin proteinen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2015.05.046en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume24en_US
dc.citation.spage200en_US
dc.citation.epage204en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000358244600031en_US
dc.citation.woscount0en_US
Appears in Collections:Articles