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dc.contributor.authorChang, Po-Hsuanen_US
dc.contributor.authorTsai, Chia-Mingen_US
dc.contributor.authorWu, Jau-Yangen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorKuo, Ming-Chingen_US
dc.date.accessioned2015-12-02T02:59:17Z-
dc.date.available2015-12-02T02:59:17Z-
dc.date.issued2015-08-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2015.2450936en_US
dc.identifier.urihttp://hdl.handle.net/11536/128005-
dc.description.abstractA monolithic constant excess bias control circuit for single-photon avalanche diode (SPAD) in standard 0.18-mu m CMOS technology is reported. The proposed real-time breakdown monitoring technique is incorporated into a passive-quenching-active-reset circuit. A sample-and-hold circuit samples the breakdown level of SPAD through well-defined sampling phase. Following the sample-and-hold circuit, the level shifter with voltage shifting defined by predetermined excess bias provides the reset voltage of SPAD. The design operates the SPAD under constant excess bias and effectively mitigates the impact of the process-voltage-temperature variation by maintaining the optimal excess bias condition.en_US
dc.language.isoen_USen_US
dc.subjectSingle-photonen_US
dc.subjectavalancheen_US
dc.subjectdiodeen_US
dc.subjectsingle-photon avalanche diodeen_US
dc.subjectbreakdownen_US
dc.titleConstant Excess Bias Control for Single-Photon Avalanche Diode Using Real-Time Breakdown Monitoringen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2015.2450936en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume36en_US
dc.citation.spage859en_US
dc.citation.epage861en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000358570300041en_US
dc.citation.woscount0en_US
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