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dc.contributor.authorLin, Yan-Chengen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.date.accessioned2015-12-02T02:59:18Z-
dc.date.available2015-12-02T02:59:18Z-
dc.date.issued2015-07-31en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/26/30/305704en_US
dc.identifier.urihttp://hdl.handle.net/11536/128021-
dc.description.abstractType-II band alignment structure is coveted in the design of photovoltaic devices, since it is beneficial for the transport of photogenerated carriers. Here we study the generation and recombination dynamics of carriers in a type-II quantum structure composed of ZnSe0.92Te0.08 highly mismatched alloys (HMAs) and Zn0.97Mn0.03Se. The photoinduced holes at the ZnSe0.92Te0.08 HMAs firstly undergo rapid relaxation to the isoelectronic centers above the valence band edge and subsequently recombine with the free electrons in the Zn0.97Mn0.03Se. The long carrier lifetimes over 120 ns induced by spatially indirect excitons that are bound to isoelectronic Te trapping states further increase with increasing temperature.en_US
dc.language.isoen_USen_US
dc.subjecttype-II band alignmenten_US
dc.subjectquantum structureen_US
dc.subjectcarrier dynamicsen_US
dc.subjectlong carrier lifetimeen_US
dc.subjectZnSeTeen_US
dc.titleCarrier generation and recombination dynamics in type-II ZnSeTe/ZnMnSe quantum structuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/26/30/305704en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume26en_US
dc.citation.issue30en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000358675900020en_US
dc.citation.woscount0en_US
Appears in Collections:Articles