完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Li, Ming-Yang | en_US |
dc.contributor.author | Shi, Yumeng | en_US |
dc.contributor.author | Cheng, Chia-Chin | en_US |
dc.contributor.author | Lu, Li-Syuan | en_US |
dc.contributor.author | Lin, Yung-Chang | en_US |
dc.contributor.author | Tang, Hao-Lin | en_US |
dc.contributor.author | Tsai, Meng-Lin | en_US |
dc.contributor.author | Chu, Chih-Wei | en_US |
dc.contributor.author | Wei, Kung-Hwa | en_US |
dc.contributor.author | He, Jr-Hau | en_US |
dc.contributor.author | Chang, Wen-Hao | en_US |
dc.contributor.author | Suenaga, Kazu | en_US |
dc.contributor.author | Li, Lain-Jong | en_US |
dc.date.accessioned | 2015-12-02T02:59:18Z | - |
dc.date.available | 2015-12-02T02:59:18Z | - |
dc.date.issued | 2015-07-31 | en_US |
dc.identifier.issn | 0036-8075 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1126/science.aab4097 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/128022 | - |
dc.description.abstract | Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1126/science.aab4097 | en_US |
dc.identifier.journal | SCIENCE | en_US |
dc.citation.volume | 349 | en_US |
dc.citation.issue | 6247 | en_US |
dc.citation.spage | 524 | en_US |
dc.citation.epage | 528 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000358713300053 | en_US |
dc.citation.woscount | 4 | en_US |
顯示於類別: | 期刊論文 |