標題: | Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming |
作者: | Simanjuntak, Firman Mangasa Panda, Debashis Tsai, Tsung-Ling Lin, Chun-An Wei, Kung-Hwa Tseng, Tseung-Yuen 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公開日期: | 20-七月-2015 |
摘要: | The influence of single and double forming on the switching stability of AZO/ZnO1-x/ITO transparent resistive memory devices was investigated. Devices that underwent single forming exhibited severe switching instability, where as those that underwent double forming exhibited excellent switching uniformity. The quantity of conducting filaments can be limited by applying the two-step forming process. Consequently, the set/reset process can be controlled, enhancing switching stability. Satisfactory endurance with an acceptable ON/OFF ratio of 10(2) and satisfactory retention behavior of 10(4)s at room temperature confirmed the reliability of optimized devices. Furthermore, highly transparent devices (transparency of approximately 85% in visible range) have been fabricated. (C) 2015 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4927284 http://hdl.handle.net/11536/128033 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4927284 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 107 |
顯示於類別: | 期刊論文 |