標題: Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming
作者: Simanjuntak, Firman Mangasa
Panda, Debashis
Tsai, Tsung-Ling
Lin, Chun-An
Wei, Kung-Hwa
Tseng, Tseung-Yuen
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 20-七月-2015
摘要: The influence of single and double forming on the switching stability of AZO/ZnO1-x/ITO transparent resistive memory devices was investigated. Devices that underwent single forming exhibited severe switching instability, where as those that underwent double forming exhibited excellent switching uniformity. The quantity of conducting filaments can be limited by applying the two-step forming process. Consequently, the set/reset process can be controlled, enhancing switching stability. Satisfactory endurance with an acceptable ON/OFF ratio of 10(2) and satisfactory retention behavior of 10(4)s at room temperature confirmed the reliability of optimized devices. Furthermore, highly transparent devices (transparency of approximately 85% in visible range) have been fabricated. (C) 2015 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4927284
http://hdl.handle.net/11536/128033
ISSN: 0003-6951
DOI: 10.1063/1.4927284
期刊: APPLIED PHYSICS LETTERS
Volume: 107
顯示於類別:期刊論文