完整後設資料紀錄
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dc.contributor.authorYang, Bo-Ruen_US
dc.contributor.authorLiu, Gui-Shien_US
dc.contributor.authorHan, Song-Jiaen_US
dc.contributor.authorCao, Wuen_US
dc.contributor.authorChen, Hui-Jiuanen_US
dc.contributor.authorLu, Jian-Gangen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.date.accessioned2015-12-02T02:59:19Z-
dc.date.available2015-12-02T02:59:19Z-
dc.date.issued2015-07-01en_US
dc.identifier.issn1551-319Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JDT.2015.2432836en_US
dc.identifier.urihttp://hdl.handle.net/11536/128052-
dc.description.abstractOwing to the superiority of being flexible, highly conductive, and extremely transparent, silver nanowire (AgNW) has been regarded as a possible candidate to replace indium-tin-oxide (ITO) for flexible transparent conductive films (TCFs), flexible electronics, and flexible display applications. To make TCFs with lower sheet resistance (R-s), but without sacrificing the optical transmittance, the deployment of AgNWs is very critical. A crossed-alignment method along with multi-stacking structure was proposed to lower the percolative threshold, which thus can decrease the R-s by a factor of more than two, in the premise of not affecting the optical transmittance.en_US
dc.language.isoen_USen_US
dc.subjectFlexible electronics and displaysen_US
dc.subjectsilver nanowires (AgNWs)en_US
dc.subjecttransparent conductive film (TCF)en_US
dc.titleHybrid Effect of Crossed Alignment and Multi-Stacking Structure on the Percolation Behavior of Silver Nanowire Networksen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JDT.2015.2432836en_US
dc.identifier.journalJOURNAL OF DISPLAY TECHNOLOGYen_US
dc.citation.volume11en_US
dc.citation.spage625en_US
dc.citation.epage629en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000358500000004en_US
dc.citation.woscount0en_US
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