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dc.contributor.authorLai, Yi-Lungen_US
dc.contributor.authorChang, Tai-Yuanen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChen, Chu-Fengen_US
dc.contributor.authorLai, Chiung-Huien_US
dc.contributor.authorChen, Yi-Mingen_US
dc.contributor.authorWhang, Allen Jong-Woeien_US
dc.contributor.authorLai, Hui-Lungen_US
dc.contributor.authorChen, Huai-Yien_US
dc.contributor.authorWang, Shiu-Yuen_US
dc.date.accessioned2015-12-02T02:59:20Z-
dc.date.available2015-12-02T02:59:20Z-
dc.date.issued2015-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.54.06FG12en_US
dc.identifier.urihttp://hdl.handle.net/11536/128075-
dc.description.abstractSi1-xGex nanowire biosensors are attractive for their high sensitivity due to the large surface-to-volume ratio, high carrier mobility, and silicon compatibility. In this work, we study the effect of the thickness of the low-temperature Si (LT-Si) buffer layer on an insulator on the sensitivity of oxidized Si1-xGex nanowire samples with different Ge contents by increasing the Si buffer thickness from 20 to 60 nm. 3-Aminopropyltrimethoxy-silane (APTMS) was used as a biochemical reagent. It was demonstrated that, with the proper Ge content and LT-Si buffer thickness, the sensitivity of the Si1-xGex nanowire is high and it can be further improved by Si1-xGex oxidation. This can be attributed to the reduction of the diameter to the nanometer order, which gives rise to an increased surface-to-volume ratio and further enhances the sensitivity of the biosensor. (C) 2015 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEffects of low-temperature Si buffer thickness and SiGe oxidation on sensitivity of Si1-xGex nanowireen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.54.06FG12en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume54en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000358264900033en_US
dc.citation.woscount0en_US
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