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dc.contributor.authorHuang, Yu Lien_US
dc.contributor.authorChen, Yifengen_US
dc.contributor.authorZhang, Wenjingen_US
dc.contributor.authorQuek, Su Yingen_US
dc.contributor.authorChen, Chang-Hsiaoen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorHsu, Wei-Tingen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorZheng, Yu Jieen_US
dc.contributor.authorChen, Weien_US
dc.contributor.authorWee, Andrew T. S.en_US
dc.date.accessioned2019-04-03T06:38:56Z-
dc.date.available2019-04-03T06:38:56Z-
dc.date.issued2015-02-01en_US
dc.identifier.issn2041-1723en_US
dc.identifier.urihttp://dx.doi.org/10.1038/ncomms7298en_US
dc.identifier.urihttp://hdl.handle.net/11536/128095-
dc.description.abstractTwo-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40 +/- 0.05 eV for single-layer, 2.10 +/- 0.05 eV for bilayer and 1.75 +/- 0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85 +/- 0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.en_US
dc.language.isoen_USen_US
dc.titleBandgap tunability at single-layer molybdenum disulphide grain boundariesen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/ncomms7298en_US
dc.identifier.journalNATURE COMMUNICATIONSen_US
dc.citation.volume6en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000358165200001en_US
dc.citation.woscount163en_US
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