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dc.contributor.authorChi, Kai-Lunen_US
dc.contributor.authorYen, Jia-Liangen_US
dc.contributor.authorWun, Jhih-Minen_US
dc.contributor.authorJiang, Jia-Weien_US
dc.contributor.authorLu, I-Chengen_US
dc.contributor.authorChen, Jasonen_US
dc.contributor.authorYang, Ying-Jayen_US
dc.contributor.authorShi, Jin-Weien_US
dc.date.accessioned2015-12-02T02:59:23Z-
dc.date.available2015-12-02T02:59:23Z-
dc.date.issued2015-11-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2015.2451015en_US
dc.identifier.urihttp://hdl.handle.net/11536/128122-
dc.description.abstractThe strong (>20 nm) wavelength detuning technique has been demonstrated to enhance the modulation speed and high-temperature characteristics (at 85 degrees C), as well as lower the required driving current density performance of oxide-relief 850-nm vertical-cavity surface-emitting lasers (VCSELs) for >40 Gbit/s operation. By increasing the wavelength detuning from 15 to 20 nm, a significant improvement in the electrical-to-optical (E-O) bandwidth (20 to 27 GHz) of the VCSEL can be observed. This detuning design (similar to 20 nm) is incorporated along with a Zn-diffusion structure into our oxide-relief VCSEL with a miniaturized oxide-relief aperture (similar to 3 mu m). Highly single-mode, high-speed (26 GHz) operation, and moderate differential resistance (100 Omega) values can be simultaneously achieved. In addition, it is found that devices with a further larger detuning wavelength (>20 nm) and enlarged oxide-relief apertures (similar to 8 mu m) can sustain the same maximum E-O bandwidth (26 GHz) as that of a miniaturized (similar to 3 mu m) VCSEL, resulting in the lower driving current density (8 versus 18.8 kA/cm(2)) required for high-speed performance. Excellent transmission performance, which includes an extremely low energy-to-data rate ratio (EDR: 228 fJ/bit; over 100 m OM4 fiber) and record-low driving-current density (8 kA/cm(2); 3.5 mA) has been successfully achieved for 41 Gbit/s error-free transmission for these VCSELs.en_US
dc.language.isoen_USen_US
dc.subjectSemiconductor lasersen_US
dc.subjectvertical cavity surface emitting lasersen_US
dc.titleStrong Wavelength Detuning of 850 nm Vertical-Cavity Surface-Emitting Lasers for High-Speed (>40 Gbit/s) and Low-Energy Consumption Operationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSTQE.2015.2451015en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume21en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000359600400001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles