完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chi, Kai-Lun | en_US |
dc.contributor.author | Yen, Jia-Liang | en_US |
dc.contributor.author | Wun, Jhih-Min | en_US |
dc.contributor.author | Jiang, Jia-Wei | en_US |
dc.contributor.author | Lu, I-Cheng | en_US |
dc.contributor.author | Chen, Jason | en_US |
dc.contributor.author | Yang, Ying-Jay | en_US |
dc.contributor.author | Shi, Jin-Wei | en_US |
dc.date.accessioned | 2015-12-02T02:59:23Z | - |
dc.date.available | 2015-12-02T02:59:23Z | - |
dc.date.issued | 2015-11-01 | en_US |
dc.identifier.issn | 1077-260X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/JSTQE.2015.2451015 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/128122 | - |
dc.description.abstract | The strong (>20 nm) wavelength detuning technique has been demonstrated to enhance the modulation speed and high-temperature characteristics (at 85 degrees C), as well as lower the required driving current density performance of oxide-relief 850-nm vertical-cavity surface-emitting lasers (VCSELs) for >40 Gbit/s operation. By increasing the wavelength detuning from 15 to 20 nm, a significant improvement in the electrical-to-optical (E-O) bandwidth (20 to 27 GHz) of the VCSEL can be observed. This detuning design (similar to 20 nm) is incorporated along with a Zn-diffusion structure into our oxide-relief VCSEL with a miniaturized oxide-relief aperture (similar to 3 mu m). Highly single-mode, high-speed (26 GHz) operation, and moderate differential resistance (100 Omega) values can be simultaneously achieved. In addition, it is found that devices with a further larger detuning wavelength (>20 nm) and enlarged oxide-relief apertures (similar to 8 mu m) can sustain the same maximum E-O bandwidth (26 GHz) as that of a miniaturized (similar to 3 mu m) VCSEL, resulting in the lower driving current density (8 versus 18.8 kA/cm(2)) required for high-speed performance. Excellent transmission performance, which includes an extremely low energy-to-data rate ratio (EDR: 228 fJ/bit; over 100 m OM4 fiber) and record-low driving-current density (8 kA/cm(2); 3.5 mA) has been successfully achieved for 41 Gbit/s error-free transmission for these VCSELs. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Semiconductor lasers | en_US |
dc.subject | vertical cavity surface emitting lasers | en_US |
dc.title | Strong Wavelength Detuning of 850 nm Vertical-Cavity Surface-Emitting Lasers for High-Speed (>40 Gbit/s) and Low-Energy Consumption Operation | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/JSTQE.2015.2451015 | en_US |
dc.identifier.journal | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | en_US |
dc.citation.volume | 21 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000359600400001 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |