標題: Investigation of defect-induced abnormal body current in fin field-effect-transistors
作者: Liu, Kuan-Ju
Chang, Ting-Chang
Chen, Ching-En
Yang, Ren-Ya
Tsai, Jyun-Yu
Lu, Ying-Hsin
Liu, Xi-Wen
Cheng, Osbert
Huang, Cheng-Tung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 24-八月-2015
摘要: This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal. (C) 2015 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4929429
http://hdl.handle.net/11536/128149
ISSN: 0003-6951
DOI: 10.1063/1.4929429
期刊: APPLIED PHYSICS LETTERS
Volume: 107
顯示於類別:期刊論文