標題: | Investigation of defect-induced abnormal body current in fin field-effect-transistors |
作者: | Liu, Kuan-Ju Chang, Ting-Chang Chen, Ching-En Yang, Ren-Ya Tsai, Jyun-Yu Lu, Ying-Hsin Liu, Xi-Wen Cheng, Osbert Huang, Cheng-Tung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 24-八月-2015 |
摘要: | This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal. (C) 2015 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4929429 http://hdl.handle.net/11536/128149 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4929429 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 107 |
顯示於類別: | 期刊論文 |