Method to evaluate afterpulsing probability in single-photon avalanche diodes

doi:10.1364/OL.40.003774

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DC Field	Value	Language
dc.contributor.author	Tzou, Bo-Wei	en_US
dc.contributor.author	Wu, Jau-Yang	en_US
dc.contributor.author	Lee, Yi-Shan	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.date.accessioned	2015-12-02T02:59:24Z	-
dc.date.available	2015-12-02T02:59:24Z	-
dc.date.issued	2015-08-15	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.40.003774	en_US
dc.identifier.uri	http://hdl.handle.net/11536/128152	-
dc.description.abstract	We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature-dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level. (C) 2015 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Method to evaluate afterpulsing probability in single-photon avalanche diodes	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OL.40.003774	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.citation.volume	40	en_US
dc.citation.issue	16	en_US
dc.citation.spage	3774	en_US
dc.citation.epage	3777	en_US
dc.contributor.department	電機工程學系	zh_TW
dc.contributor.department	Department of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000359727800024	en_US
dc.citation.woscount	0	en_US
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