完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tzou, Bo-Wei | en_US |
dc.contributor.author | Wu, Jau-Yang | en_US |
dc.contributor.author | Lee, Yi-Shan | en_US |
dc.contributor.author | Lin, Sheng-Di | en_US |
dc.date.accessioned | 2015-12-02T02:59:24Z | - |
dc.date.available | 2015-12-02T02:59:24Z | - |
dc.date.issued | 2015-08-15 | en_US |
dc.identifier.issn | 0146-9592 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1364/OL.40.003774 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/128152 | - |
dc.description.abstract | We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature-dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level. (C) 2015 Optical Society of America | en_US |
dc.language.iso | en_US | en_US |
dc.title | Method to evaluate afterpulsing probability in single-photon avalanche diodes | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1364/OL.40.003774 | en_US |
dc.identifier.journal | OPTICS LETTERS | en_US |
dc.citation.volume | 40 | en_US |
dc.citation.issue | 16 | en_US |
dc.citation.spage | 3774 | en_US |
dc.citation.epage | 3777 | en_US |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000359727800024 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |