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dc.contributor.authorYen, Shun-Tungen_US
dc.contributor.authorChung, Pei-Kangen_US
dc.date.accessioned2015-12-02T02:59:24Z-
dc.date.available2015-12-02T02:59:24Z-
dc.date.issued2015-08-15en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.40.003877en_US
dc.identifier.urihttp://hdl.handle.net/11536/128153-
dc.description.abstractWe study the far-infrared absorption properties of a thin GaAs film on Au. We show that a 1.2-mu m GaAs film on Au can completely absorb an electromagnetic wave of 7.9 THz and totally reflect the waves of frequencies not very close to 7.9 THz. The uniformity of the layered structure enables observation of a quasi-monochromatic, nearly perfect absorption of 96% in a 1.4-mu m GaAs film. The absorption can be high for a wide range of incident angles. (C) 2015 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleFar-infrared quasi-monochromatic perfect absorption in a thin GaAs film on golden_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.40.003877en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume40en_US
dc.citation.issue16en_US
dc.citation.spage3877en_US
dc.citation.epage3880en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000359727800050en_US
dc.citation.woscount0en_US
Appears in Collections:Articles