標題: Investigation of Hydration Reaction-Induced Protons Transport in Etching-Stop a-InGaZnO Thin-Film Transistors
作者: Jhu, Jhe-Ciou
Chang, Ting-Chang
Chang, Kuan-Chang
Yang, Chung-Yi
Chou, Wu-Ching
Chou, Cheng-Hsu
Chung, Wang-Cheng
電子物理學系
Department of Electrophysics
關鍵字: Thin film transistor;a-IGZO;oxide thin film transistor;proton transport
公開日期: 1-十月-2015
摘要: In this letter, protons (hydrogen ions, H+ ions) transport-induced unstable transient electrical characteristics were found and studied in the etching-stop-layer in via-contact-type amorphous-indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) for the first time. By applying negative gate bias stress, more water molecules will be absorbed on the surface of the passivation layer, and thus the transmission of net protons in the etching-stop will increase. The proton transport model established in this letter can effectively analyze the a-IGZO TFTs instability using the threshold voltage (VT) determined from the current-voltage measurements, and which is unstable in a moist environment.
URI: http://dx.doi.org/10.1109/LED.2015.2466103
http://hdl.handle.net/11536/128236
ISSN: 0741-3106
DOI: 10.1109/LED.2015.2466103
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 36
Issue: 10
起始頁: 1050
結束頁: 1052
顯示於類別:期刊論文