Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huang, Y. J. | en_US |
dc.contributor.author | Cho, H. H. | en_US |
dc.contributor.author | Tzeng, Y. S. | en_US |
dc.contributor.author | Liang, H. C. | en_US |
dc.contributor.author | Su, K. W. | en_US |
dc.contributor.author | Chen, Y. F. | en_US |
dc.date.accessioned | 2019-04-03T06:36:29Z | - |
dc.date.available | 2019-04-03T06:36:29Z | - |
dc.date.issued | 2015-10-01 | en_US |
dc.identifier.issn | 2159-3930 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1364/OME.5.002136 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/128242 | - |
dc.description.abstract | A new type of diffusion-bonded Nd:YVO4/Nd:GdVO4 hetero-composite crystal is originally designed and applied to diode-end-pumped laser for achieving an efficient dual-comb picosecond operation with self-mode locking for the first time. As high as 1.1 W of the total average output power at 1063.18 and 1064.37 nm is generated under an incident pump power of 5.1 W. The corresponding mode-locked pulse width is 42 ps at a pulse repetition rate of 3.82 GHz. Through the optical beating between two carrier frequencies of each spectral component, a train of ultrashort pulses with sub-terahertz repetition rate is further generated with the effective duration of down to 1.6 ps. (C) 2015 Optical Society of America. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Efficient dual-wavelength diode-end-pumped laser with a diffusion-bonded Nd:YVO4/Nd:GdVO4 crystal | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1364/OME.5.002136 | en_US |
dc.identifier.journal | OPTICAL MATERIALS EXPRESS | en_US |
dc.citation.volume | 5 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 2136 | en_US |
dc.citation.epage | 2141 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000362460000006 | en_US |
dc.citation.woscount | 7 | en_US |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.