标题: | Double superstructures in InGaN/GaN nano-pyramid arrays |
作者: | Chang, Chiao-Yun Li, Heng Hong, Kuo-Bin Yang, Ya-Yu Lai, Wei-Chih Lu, Tien-Chang 光电工程学系 Department of Photonics |
关键字: | LEDs;InGaN/GaN MQWs;Nanopyramid |
公开日期: | 1-十月-2015 |
摘要: | We have fabricated and investigated InGaN/GaN nanopyramid arrays grown on c-plane sapphire by selective area growth technique. The double InGaN/GaN superstructures were formed in one GaN pyramid observed in transmittance emission microscopy. The two growth faces on GaN nanopyramind showed different growth rates, resulted in double superheterostructures of semi-polar facets for InGaN/GaN multiple quantum wells (MQWs) and c-plane InGaN/GaN nano-hetero-disk (NHD) under the nanoscale growth condition. The c-plane InGaN/GaN NHD had high Indium composition due to the pulling effect, exhibiting double wavelength emissions from GaN nanopyramid. And InGaN/GaN MQWs and c-plane InGaN/GaN NHD showed extremely low quantum confinement Stark effect, yielding great light emission efficiency. This result is beneficial for the development of blue, green and white light-emitting diodes. (C) 2015 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.spmi.2015.07.059 http://hdl.handle.net/11536/128244 |
ISSN: | 0749-6036 |
DOI: | 10.1016/j.spmi.2015.07.059 |
期刊: | SUPERLATTICES AND MICROSTRUCTURES |
Volume: | 86 |
起始页: | 275 |
结束页: | 279 |
显示于类别: | Articles |