标题: Double superstructures in InGaN/GaN nano-pyramid arrays
作者: Chang, Chiao-Yun
Li, Heng
Hong, Kuo-Bin
Yang, Ya-Yu
Lai, Wei-Chih
Lu, Tien-Chang
光电工程学系
Department of Photonics
关键字: LEDs;InGaN/GaN MQWs;Nanopyramid
公开日期: 1-十月-2015
摘要: We have fabricated and investigated InGaN/GaN nanopyramid arrays grown on c-plane sapphire by selective area growth technique. The double InGaN/GaN superstructures were formed in one GaN pyramid observed in transmittance emission microscopy. The two growth faces on GaN nanopyramind showed different growth rates, resulted in double superheterostructures of semi-polar facets for InGaN/GaN multiple quantum wells (MQWs) and c-plane InGaN/GaN nano-hetero-disk (NHD) under the nanoscale growth condition. The c-plane InGaN/GaN NHD had high Indium composition due to the pulling effect, exhibiting double wavelength emissions from GaN nanopyramid. And InGaN/GaN MQWs and c-plane InGaN/GaN NHD showed extremely low quantum confinement Stark effect, yielding great light emission efficiency. This result is beneficial for the development of blue, green and white light-emitting diodes. (C) 2015 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.spmi.2015.07.059
http://hdl.handle.net/11536/128244
ISSN: 0749-6036
DOI: 10.1016/j.spmi.2015.07.059
期刊: SUPERLATTICES AND MICROSTRUCTURES
Volume: 86
起始页: 275
结束页: 279
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