Full metadata record
DC FieldValueLanguage
dc.contributor.authorYang, Bo-Ruen_US
dc.contributor.authorCao, Wuen_US
dc.contributor.authorLiu, Gui-Shien_US
dc.contributor.authorChen, Hui-Jiuanen_US
dc.contributor.authorNoh, Yong-Youngen_US
dc.contributor.authorMinari, Takeoen_US
dc.contributor.authorHsiao, Hsiang-Chihen_US
dc.contributor.authorLee, Chia-Yuen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.contributor.authorLiu, Chuanen_US
dc.date.accessioned2015-12-02T02:59:30Z-
dc.date.available2015-12-02T02:59:30Z-
dc.date.issued2015-09-30en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.5b06370en_US
dc.identifier.urihttp://hdl.handle.net/11536/128270-
dc.description.abstractPatterning and alignment of conductive nanowires are essential for good electrical isolation and high conductivity in various applications. Herein a facile bottom-up, additive technique is developed to pattern and align silver nanowires (AgNWs) by manipulating wetting of dispersions in microchannels. By forming hydrophobic/hydrophilic micropatterns down to 8 mu m with fiuoropolymer (Cytop) and SiO2, the aqueous AgNW dispersions with the optimized surface tension and viscosity self-assemble into microdroplets and then dry to form anisotropic AgNW networks. The alignment degree characterized by the full width at half-maximum (FWHM) can be well-controlled from 39.8 degrees to 84.1 degrees by changing the width of microchannels. A mechanism is proposed and validated by statistical analysis on AgNW alignment, and a static model is proposed to guide the patterning of general NWs. The alignment reduced well the electrical resistivity of AgNW networks by a factor of 5 because of the formation of efficient percolation path for carrier conduction.en_US
dc.language.isoen_USen_US
dc.subjectfluoropolymeren_US
dc.subjectmicrochannelen_US
dc.subjectself-assembly patterningen_US
dc.subjectalignmenten_US
dc.subjectsilver nanowiresen_US
dc.titleMicrochannel Wetting for Controllable Patterning and Alignment of Silver Nanowire with High Resolutionen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsami.5b06370en_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.issue38en_US
dc.citation.spage21433en_US
dc.citation.epage21441en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000362243500050en_US
dc.citation.woscount0en_US
Appears in Collections:Articles