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dc.contributor.authorHonisch, Christophen_US
dc.contributor.authorLin, Te-Shengen_US
dc.contributor.authorHeuer, Andreasen_US
dc.contributor.authorThiele, Uween_US
dc.contributor.authorGurevich, Svetlana V.en_US
dc.date.accessioned2015-12-02T02:59:30Z-
dc.date.available2015-12-02T02:59:30Z-
dc.date.issued2015-09-29en_US
dc.identifier.issn0743-7463en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.langmuir.5b02407en_US
dc.identifier.urihttp://hdl.handle.net/11536/128271-
dc.description.abstractA mesoscopic continuum model is employed to analyze the transport mechanisms and structure formation during the redistribution stage of deposition experiments where organic molecules are deposited on a solid substrate with periodic stripe-like wettability patterns. Transversally invariant ridges located on the more wettable stripes are identified as very important transient states and their linear stability is analyzed accompanied by direct numerical simulations of the fully nonlinear evolution equation for two-dimensional substrates. It is found that there exist two different instability modes that lead to different nonlinear evolutions that result (i) at large ridge volume in the formation of bulges that spill from the more wettable stripes onto the less wettable bare substrate and (ii) at small ridge volume in the formation of small droplets located on the more wettable stripes. In addition, the influence of different transport mechanisms during redistribution is investigated focusing on the cases of convective transport with no-slip at the substrate, transport via diffusion in the film bulk and via diffusion at the film surface. In particular, it is shown that the transport process does neither influence the linear stability thresholds nor the sequence of morphologies observed in the time simulation, but only the ratio of the time scales of the different process phases.en_US
dc.language.isoen_USen_US
dc.titleInstabilities of Layers of Deposited Molecules on Chemically Stripe Patterned Substrates: Ridges versus Dropsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.langmuir.5b02407en_US
dc.identifier.journalLANGMUIRen_US
dc.citation.volume31en_US
dc.citation.issue38en_US
dc.citation.spage10618en_US
dc.citation.epage10631en_US
dc.contributor.department應用數學系zh_TW
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.identifier.wosnumberWOS:000362243600036en_US
dc.citation.woscount0en_US
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