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dc.contributor.authorTu, Chien-Mingen_US
dc.contributor.authorYeh, Tien-Tienen_US
dc.contributor.authorTzeng, Wen-Yenen_US
dc.contributor.authorChen, Yi-Ruen_US
dc.contributor.authorChen, Hsueh-Juen_US
dc.contributor.authorKu, Shin-Anen_US
dc.contributor.authorLuo, Chih-Weien_US
dc.contributor.authorLin, Jiunn-Yuanen_US
dc.contributor.authorWu, Kaung-Hsiungen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.contributor.authorKobayashi, Takayoshien_US
dc.contributor.authorCheng, Cheng-Mawen_US
dc.contributor.authorTsuei, Ku-Dingen_US
dc.contributor.authorBerger, Helmuthen_US
dc.contributor.authorSankar, Ramanen_US
dc.contributor.authorChou, Fang-Chengen_US
dc.date.accessioned2019-04-03T06:35:33Z-
dc.date.available2019-04-03T06:35:33Z-
dc.date.issued2015-09-15en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/srep14128en_US
dc.identifier.urihttp://hdl.handle.net/11536/128276-
dc.description.abstractTopological insulators (TIs) are interesting quantum matters that have a narrow bandgap for bulk and a Dirac-cone-like conducting surface state (SS). The recent discovered second Dirac surface state (SS) and bulk bands (BBs) located similar to 1.5 eV above the first SS are important for optical coupling in TIs. Here, we report on the time-domain measurements of THz radiation generated from TIs n-type Cu0.02Bi2Se3 and p-type Bi2Te3 single crystals by ultrafast optical pulse excitation. The observed polarity-reversal of the THz pulse originated from transient current is unusual, and cannot be reconciled with the photo-Dember effect. The second SS and BBs are found to be indispensable for the explanation of the unusual phenomenon. Thanks to the existence of the second SS and BBs, TIs manifest an effective wide band gap in THz generation. The present study demonstrates that time-domain THz spectroscopy provide rich information of the optical coupling and the electronic structure of TIs.en_US
dc.language.isoen_USen_US
dc.titleManifestation of a Second Dirac Surface State and Bulk Bands in THz Radiation from Topological Insulatorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/srep14128en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume5en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department電機學院zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000361174800002en_US
dc.citation.woscount13en_US
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