Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

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DC 欄位	值	語言
dc.contributor.author	Chen, Jui-Yuan	en_US
dc.contributor.author	Huang, Chun-Wei	en_US
dc.contributor.author	Chiu, Chung-Hua	en_US
dc.contributor.author	Huang, Yu-Ting	en_US
dc.contributor.author	Wu, Wen-Wei	en_US
dc.date.accessioned	2015-12-02T02:59:30Z	-
dc.date.available	2015-12-02T02:59:30Z	-
dc.date.issued	2015-09-09	en_US
dc.identifier.issn	0935-9648	en_US
dc.identifier.uri	http://dx.doi.org/10.1002/adma.201502758	en_US
dc.identifier.uri	http://hdl.handle.net/11536/128281	-
dc.description.abstract	The filament in a Au/Ta2O5/Au system is analyzed and determined to be a nanoscaled TaO2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects.	en_US
dc.language.iso	en_US	en_US
dc.title	Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1002/adma.201502758	en_US
dc.identifier.journal	ADVANCED MATERIALS	en_US
dc.citation.volume	27	en_US
dc.citation.issue	34	en_US
dc.citation.spage	5028	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000360981800012	en_US
dc.citation.woscount	0	en_US
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