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dc.contributor.authorHsu, Kung-Shuen_US
dc.contributor.authorHung, Wei-Chunen_US
dc.contributor.authorChang, Chih-Chien_US
dc.contributor.authorLin, Wei-Hsunen_US
dc.contributor.authorShih, Min-Hsiungen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.authorChang, Shu-Weien_US
dc.contributor.authorChang, Yia-Chungen_US
dc.date.accessioned2015-12-02T02:59:32Z-
dc.date.available2015-12-02T02:59:32Z-
dc.date.issued2015-08-31en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4929948en_US
dc.identifier.urihttp://hdl.handle.net/11536/128310-
dc.description.abstractWe demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions. (C) 2015 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleLasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavityen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4929948en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume107en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000360926200013en_US
dc.citation.woscount0en_US
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