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dc.contributor.authorYu, Ming-Hungen_US
dc.contributor.authorTran, Trong-Hieuen_US
dc.contributor.authorHsu, Yen-Pingen_US
dc.contributor.authorChao, Paul C. -P.en_US
dc.contributor.authorLee, Kuei-Yuen_US
dc.contributor.authorKao, Yung-Huaen_US
dc.date.accessioned2015-12-02T02:59:34Z-
dc.date.available2015-12-02T02:59:34Z-
dc.date.issued2015-12-01en_US
dc.identifier.issn0946-7076en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00542-015-2542-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/128365-
dc.description.abstractA new prediction model for estimating luminance degradation of an OLED subjected to varied combinations of forward and reverse biases is proposed. To this end, the known increase in the voltage of OLEDs under long-time operation versus degraded emitted luminance is first-time ever considered to identify the degradation exponent as logarithm functions of elapsed time. With the identified degradation versus time, the degraded OLED luminance can be well predicted even subjected to varied combinations of forward and reverse biases. The established model is particularly useful for achieving required lifetime of modern AMOLED displays. Based on the model in terms of equations, the OLED parameters including forward, reverse bias stresses, and initial luminance can be applied to the model to accurately estimate the luminance variation during long-time operation. The estimation error between model predictions and experimental measurements is less than 1.6 %.en_US
dc.language.isoen_USen_US
dc.titleA new prediction model on the luminance of OLEDs subjected to different reverse biases for alleviating degradation in AMOLED displaysen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00542-015-2542-3en_US
dc.identifier.journalMICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMSen_US
dc.citation.volume21en_US
dc.citation.issue12en_US
dc.citation.spage2771en_US
dc.citation.epage2776en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000364014000033en_US
dc.citation.woscount0en_US
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