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dc.contributor.authorYuan, Shuo-Huangen_US
dc.contributor.authorPei, Zingwayen_US
dc.contributor.authorLai, Hsin-Chengen_US
dc.contributor.authorChen, Chien-Hsunen_US
dc.contributor.authorLi, Pei-Wenen_US
dc.contributor.authorChan, Yi-Jenen_US
dc.date.accessioned2015-12-02T02:59:35Z-
dc.date.available2015-12-02T02:59:35Z-
dc.date.issued2015-11-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2015.2479239en_US
dc.identifier.urihttp://hdl.handle.net/11536/128380-
dc.description.abstractIn this letter, a pentacene thin-film phototransistor (PTFP) with gold nanoparticles (Au-NPs) decoration in bottom-gate structure was demonstrated. With the Au-NPs, this device is capable of scattering the free-space ultra-violet (UV) irradiation into the pentacene film. Therefore, the PTFP with Au-NPs exhibit 4.5-A/W responsivity with V-GS = 0 V at the wavelength of 240 nm. Meanwhile, an ultimate 32.4-A/W responsivity can be achieved with V-GS = -10 V at the wavelength of 240 nm. Such an excellent spectral response suggests PTFP is capable for used in daily and disposable UV status assessment.en_US
dc.language.isoen_USen_US
dc.subjectPhototransistoren_US
dc.subjectgold nanoparticlesen_US
dc.subjectresponsivityen_US
dc.titleAu Nanoparticle Light Scattering Enhanced Responsivity in Pentacene Phototransistor for Deep-UV Light Detectionen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2015.2479239en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume36en_US
dc.citation.issue11en_US
dc.citation.spage1186en_US
dc.citation.epage1188en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000364094300023en_US
dc.citation.woscount0en_US
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