完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Li, Yu-Ren | en_US |
dc.contributor.author | Chang, Shih-Hsueh | en_US |
dc.contributor.author | Tsai, Wan-Lin | en_US |
dc.contributor.author | Chang, Chia-Tsung | en_US |
dc.contributor.author | Wang, Kuang-Yu | en_US |
dc.contributor.author | Yang, Po-Yu | en_US |
dc.contributor.author | Cheng, Huang-Chung | en_US |
dc.date.accessioned | 2015-12-02T02:59:36Z | - |
dc.date.available | 2015-12-02T02:59:36Z | - |
dc.date.issued | 2015-11-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2015.2477851 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/128381 | - |
dc.description.abstract | The oxygen-plasma-treated reduced graphene oxide films (OPT-RGOFs) as the pH sensing membranes for the extended-gate field-effect transistors were demonstrated to achieve the higher pH sensitivity of 52 mV/pH and better linearity of 0.996 in a wide sensing range of pH 1-13 than those without plasma treatment. It was attributed to the oxygen-containing functional groups on the RGOF induced from the plasma treatment. In addition, the OPT-RGOFs sprayed on the reverse pyramid substrates were also proposed to further enhance the sensing sites, leading to a superior pH sensitivity of 57 mV/pH with an excellent linearity of 0.996. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Extended-gate field-effect transistors (EGFETs) | en_US |
dc.subject | graphene | en_US |
dc.subject | pH sensors | en_US |
dc.title | Highly Sensitive pH Sensors of Extended-Gate Field-Effect Transistor With the OxygenFunctionalized Reduced Graphene Oxide Films on Reverse Pyramid Substrates | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2015.2477851 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 36 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 1189 | en_US |
dc.citation.epage | 1191 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000364094300024 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |