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dc.contributor.authorLi, Yu-Renen_US
dc.contributor.authorChang, Shih-Hsuehen_US
dc.contributor.authorTsai, Wan-Linen_US
dc.contributor.authorChang, Chia-Tsungen_US
dc.contributor.authorWang, Kuang-Yuen_US
dc.contributor.authorYang, Po-Yuen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2015-12-02T02:59:36Z-
dc.date.available2015-12-02T02:59:36Z-
dc.date.issued2015-11-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2015.2477851en_US
dc.identifier.urihttp://hdl.handle.net/11536/128381-
dc.description.abstractThe oxygen-plasma-treated reduced graphene oxide films (OPT-RGOFs) as the pH sensing membranes for the extended-gate field-effect transistors were demonstrated to achieve the higher pH sensitivity of 52 mV/pH and better linearity of 0.996 in a wide sensing range of pH 1-13 than those without plasma treatment. It was attributed to the oxygen-containing functional groups on the RGOF induced from the plasma treatment. In addition, the OPT-RGOFs sprayed on the reverse pyramid substrates were also proposed to further enhance the sensing sites, leading to a superior pH sensitivity of 57 mV/pH with an excellent linearity of 0.996.en_US
dc.language.isoen_USen_US
dc.subjectExtended-gate field-effect transistors (EGFETs)en_US
dc.subjectgrapheneen_US
dc.subjectpH sensorsen_US
dc.titleHighly Sensitive pH Sensors of Extended-Gate Field-Effect Transistor With the OxygenFunctionalized Reduced Graphene Oxide Films on Reverse Pyramid Substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2015.2477851en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume36en_US
dc.citation.issue11en_US
dc.citation.spage1189en_US
dc.citation.epage1191en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000364094300024en_US
dc.citation.woscount0en_US
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