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dc.contributor.authorKe, Wen-Chengen_US
dc.contributor.authorLee, Fang-Weien_US
dc.contributor.authorYang, Cheng-Yien_US
dc.contributor.authorChen, Wei-Kuoen_US
dc.contributor.authorHuang, Hao-Pingen_US
dc.date.accessioned2015-12-02T02:59:39Z-
dc.date.available2015-12-02T02:59:39Z-
dc.date.issued2015-10-21en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4933273en_US
dc.identifier.urihttp://hdl.handle.net/11536/128405-
dc.description.abstractThis study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 x 10(-4) Omega cm(2) was achieved for a sample annealed at 500 degrees C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 x 10(8) cm(-2). By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (V-o) in the InON nanodots played a crucial role in carrier transport. The fitting I-V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling. (C) 2015 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleTrap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaNen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4933273en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume118en_US
dc.citation.issue15en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000363535800039en_US
dc.citation.woscount0en_US
Appears in Collections:Articles