完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsu, Feng-Kuo | en_US |
dc.contributor.author | Xie, Wei | en_US |
dc.contributor.author | Lee, Yi-Shan | en_US |
dc.contributor.author | Lin, Sheng-Di | en_US |
dc.contributor.author | Lai, Chih Wei | en_US |
dc.date.accessioned | 2019-04-03T06:36:22Z | - |
dc.date.available | 2019-04-03T06:36:22Z | - |
dc.date.issued | 2015-10-19 | en_US |
dc.identifier.issn | 2045-2322 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1038/srep15347 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/128411 | - |
dc.description.abstract | We demonstrate sequential lasing at two well-separated energies in a highly photoexcited planar microcavity at room temperature. Two spatially overlapped lasing states with distinct polarization properties appear at energies more than 5 meV apart. Under a circularly polarized nonresonant 2 ps pulse excitation, a sub-10-ps transient circularly polarized high-energy (HE) state emerges within 10 ps after the pulse excitation. This HE state is followed by a pulsed state that lasts for 20-50 ps at a low energy (LE) state. The HE state is highly circularly polarized as a result of a spin-preserving stimulated process, while the LE state shows a significantly reduced circular polarization because of a diminishing spin imbalance. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Transient dual-energy lasing in a semiconductor microcavity | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1038/srep15347 | en_US |
dc.identifier.journal | SCIENTIFIC REPORTS | en_US |
dc.citation.volume | 5 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000362987900001 | en_US |
dc.citation.woscount | 1 | en_US |
顯示於類別: | 期刊論文 |