完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHsu, Feng-Kuoen_US
dc.contributor.authorXie, Weien_US
dc.contributor.authorLee, Yi-Shanen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorLai, Chih Weien_US
dc.date.accessioned2019-04-03T06:36:22Z-
dc.date.available2019-04-03T06:36:22Z-
dc.date.issued2015-10-19en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/srep15347en_US
dc.identifier.urihttp://hdl.handle.net/11536/128411-
dc.description.abstractWe demonstrate sequential lasing at two well-separated energies in a highly photoexcited planar microcavity at room temperature. Two spatially overlapped lasing states with distinct polarization properties appear at energies more than 5 meV apart. Under a circularly polarized nonresonant 2 ps pulse excitation, a sub-10-ps transient circularly polarized high-energy (HE) state emerges within 10 ps after the pulse excitation. This HE state is followed by a pulsed state that lasts for 20-50 ps at a low energy (LE) state. The HE state is highly circularly polarized as a result of a spin-preserving stimulated process, while the LE state shows a significantly reduced circular polarization because of a diminishing spin imbalance.en_US
dc.language.isoen_USen_US
dc.titleTransient dual-energy lasing in a semiconductor microcavityen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/srep15347en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume5en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000362987900001en_US
dc.citation.woscount1en_US
顯示於類別:期刊論文


文件中的檔案:

  1. 21ebd6db8bc83406d06000b2f5fc72cd.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。