標題: | Epitaxial single-crystal of GaSe epilayers grown on a c-sapphire substrate by molecular beam epitaxy |
作者: | Wu, Chia-Hsin Yang, Chu-Shou Wang, Yen-Chi Huang, Hsi-Jung Ho, Yen-Teng Wei, Lin-Lung Chang, Edward Yi 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | epilayers;GaSe;molecular beam epitaxy;sapphire substrates;transmission electron microscopy |
公開日期: | 1-十月-2015 |
摘要: | In this study, hetero-epitaxy of GaSe epilayers on a c-sapphire substrate achieved using molecular beam epitaxy was demonstrated. The GaSe epitaxial growth was monitored using in situ reflection high-energy electron diffraction (RHEED). Streak RHEED patterns showed a flat and highly crystalline situation. Furthermore, two RHEED patterns were observed after 15min of growth, and they were correlated with the m-axis and a-axis of hexagonal GaSe. The single crystal of GaSe was verified using X-ray diffraction and high-resolution cross-section transmission electron microscopy. The full width at half-maximum of (0002) in the XRD rocking-curve spectrum of GaSe epilayer is obtain around 207arcsec, which is the smallest value observed to date. The epitaxial growth of GaSe demonstrated the feasibility of growing large-area epilayers. |
URI: | http://dx.doi.org/10.1002/pssa.201532367 http://hdl.handle.net/11536/128436 |
ISSN: | 1862-6300 |
DOI: | 10.1002/pssa.201532367 |
期刊: | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE |
Volume: | 212 |
Issue: | 10 |
起始頁: | 2201 |
結束頁: | 2204 |
顯示於類別: | 期刊論文 |