標題: Epitaxial single-crystal of GaSe epilayers grown on a c-sapphire substrate by molecular beam epitaxy
作者: Wu, Chia-Hsin
Yang, Chu-Shou
Wang, Yen-Chi
Huang, Hsi-Jung
Ho, Yen-Teng
Wei, Lin-Lung
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: epilayers;GaSe;molecular beam epitaxy;sapphire substrates;transmission electron microscopy
公開日期: 1-十月-2015
摘要: In this study, hetero-epitaxy of GaSe epilayers on a c-sapphire substrate achieved using molecular beam epitaxy was demonstrated. The GaSe epitaxial growth was monitored using in situ reflection high-energy electron diffraction (RHEED). Streak RHEED patterns showed a flat and highly crystalline situation. Furthermore, two RHEED patterns were observed after 15min of growth, and they were correlated with the m-axis and a-axis of hexagonal GaSe. The single crystal of GaSe was verified using X-ray diffraction and high-resolution cross-section transmission electron microscopy. The full width at half-maximum of (0002) in the XRD rocking-curve spectrum of GaSe epilayer is obtain around 207arcsec, which is the smallest value observed to date. The epitaxial growth of GaSe demonstrated the feasibility of growing large-area epilayers.
URI: http://dx.doi.org/10.1002/pssa.201532367
http://hdl.handle.net/11536/128436
ISSN: 1862-6300
DOI: 10.1002/pssa.201532367
期刊: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume: 212
Issue: 10
起始頁: 2201
結束頁: 2204
顯示於類別:期刊論文