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dc.contributor.authorLin, Chia-Hsienen_US
dc.contributor.authorYou, Wen-Tingen_US
dc.contributor.authorChou, Hsiang-Yuen_US
dc.contributor.authorCheng, Shun-Jenen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorChang, Wen-Haoen_US
dc.date.accessioned2019-04-03T06:39:56Z-
dc.date.available2019-04-03T06:39:56Z-
dc.date.issued2011-02-28en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.83.075317en_US
dc.identifier.urihttp://hdl.handle.net/11536/128456-
dc.description.abstractWe report on a systematic correlation between the fine-structure splitting and polarization anisotropy of excitons in InAs/GaAs quantum dots, but with an unexpected reversal in order of the polarization eigenaxes. Such an anticorrelation is explained by a large valence-band-mixing induced splitting due to the shape and strain anisotropies. The strength and phase of valence band mixing are also found to play an important role in the tuning of fine structure splitting using an in-plane magnetic field.en_US
dc.language.isoen_USen_US
dc.titleAnticorrelation between the splitting and polarization of the exciton fine structure in single self-assembled InAs/GaAs quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.83.075317en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume83en_US
dc.citation.issue7en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000287796600008en_US
dc.citation.woscount25en_US
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