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dc.contributor.authorChen, Po-Chunen_US
dc.contributor.authorChen, Chien-Chonen_US
dc.contributor.authorChen, Shih-Hsunen_US
dc.contributor.authorChou, Chung-Yien_US
dc.contributor.authorHsieh, Sheng-Jenen_US
dc.date.accessioned2019-04-03T06:47:06Z-
dc.date.available2019-04-03T06:47:06Z-
dc.date.issued2015-01-01en_US
dc.identifier.isbn978-1-62841-601-5en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://dx.doi.org/10.1117/12.2176796en_US
dc.identifier.urihttp://hdl.handle.net/11536/128463-
dc.description.abstractThe objective of this study is to achieve a high sensitive infrared detector by fabricating highly ordered array of indium-antimony (In-Sb) nanowires which is a semiconductor material. The approach is to investigate an infrared detector with arrayed nanowires which can transport signals in one dimension to obtain high efficiency and sensitivity compared with In-Sb by using traditional thin film fabrications. This research expects to provide an infrared detector by fabricating III-V alloy nanowires to highly improve the resolution of infrared signal. To develop scaled-up functional devices, highly ordered nanowire arrays are essential building blocks. Many candidate materials (metals, alloys, oxides and semiconductors) have been studied for various potential applications in nanotechnology and have shown some promising results. The solid metallic nanowires have been exploited for a wide range of applications to take the advantages of their large length/diameter aspect ratio. Further development to synthesize nanowires efficiently at lower cost is the direction for manufacturing next generation nanodevices. In this study, various diameters of ordering nanowires, from 10 nm to 500 nm, were fabricated and evaluated the performance of the sensitivity of infrared detection. Moreover, a 1 inch plate, which can be regarded as a device, with nanowires array was fabricated by designing a new type of processing chamber.en_US
dc.language.isoen_USen_US
dc.subjectInSben_US
dc.subjectnanowiresen_US
dc.subjectAAOen_US
dc.subjectinfrareden_US
dc.titleHighly Sensitive Arrayed Indium-Antimony Nanowires for Infrared Detectionen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.2176796en_US
dc.identifier.journalTHERMOSENSE: THERMAL INFRARED APPLICATIONS XXXVIIen_US
dc.citation.volume9485en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department生醫電子轉譯研究中心zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentBiomedical Electronics Translational Research Centeren_US
dc.identifier.wosnumberWOS:000356923600020en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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