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dc.contributor.authorKuo, Yueen_US
dc.contributor.authorChang, Geng Weien_US
dc.date.accessioned2015-12-02T03:00:50Z-
dc.date.available2015-12-02T03:00:50Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-1-60768-547-0en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://dx.doi.org/10.1149/06410.0145ecsten_US
dc.identifier.urihttp://hdl.handle.net/11536/128480-
dc.description.abstractTFTs can be used as driving or detecting devices for purposes of optical, chemical, or biological sensing, imaging, displays, etc. Assuming the stability is not an issue, the poly-Si, IGZO, and a-Si:H TFTs were compared with respect to the device driving capability. For the drain-attached device, the maximum available power is determined by the device\'s resistance and the TFT\'s on-current. For the gate-attached device, the study is based on connecting a resistor and a capacitor in parallel. The raise or decay of the drain current is dependent on the RC time delay. Although the high mobility TFT has many advnatages, the low mobility TFT is adequate for certain applications. In real applications, the manufactuability and cost are important factors in choosing the TFT.en_US
dc.language.isoen_USen_US
dc.titleThin Film Transistors As Driving Devices for Attached Devicesen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/06410.0145ecsten_US
dc.identifier.journalTHIN FILM TRANSISTORS 12 (TFT 12)en_US
dc.citation.volume64en_US
dc.citation.issue10en_US
dc.citation.spage145en_US
dc.citation.epage153en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000356775400020en_US
dc.citation.woscount0en_US
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