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dc.contributor.authorChen, Po-Hsunen_US
dc.contributor.authorSu, Vincenten_US
dc.contributor.authorYou, Yao-Hongen_US
dc.contributor.authorLee, Ming-Lunen_US
dc.contributor.authorHsieh, Cheng-Juen_US
dc.contributor.authorKuan, Chieh-Hsiungen_US
dc.contributor.authorChen, Hung-Mingen_US
dc.contributor.authorYang, Han-Boen_US
dc.contributor.authorLin, Hung-Chouen_US
dc.contributor.authorLin, Ray-Mingen_US
dc.contributor.authorChu, Fu-Chuanen_US
dc.contributor.authorSu, Gu-Yien_US
dc.date.accessioned2015-12-02T03:00:51Z-
dc.date.available2015-12-02T03:00:51Z-
dc.date.issued2013-01-01en_US
dc.identifier.isbn978-1-55752-973-2en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/128491-
dc.description.abstractThis paper demonstrates that the quantum-confined stark effect of InGaN-based light-emitting diodes can be enhanced by the means of using the hexagonal nano-post patterned sapphire substrates based on the increase of the post-duty cycle.en_US
dc.language.isoen_USen_US
dc.titleThe Analysis of Nano-Patterned Sapphire Substrates-Induced Compressive Strain to Enhance Quantum-Confined Stark Effect of InGaN-Based Light-Emitting Diodesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000355262502082en_US
dc.citation.woscount0en_US
顯示於類別：會議論文


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