Investigation of Cu-Zn Point Defect on the Photovaltaic Performance of the RF-Sputtered Cu2ZnSnSe4-Based Thin Film Solar Cell

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DC Field	Value	Language
dc.contributor.author	Kuo, Shou-Yi	en_US
dc.contributor.author	Hsieh, Dan-Hua	en_US
dc.contributor.author	Yanga, Jui-Fu	en_US
dc.contributor.author	Lai, Fang-I	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.date.accessioned	2015-12-02T03:00:52Z	-
dc.date.available	2015-12-02T03:00:52Z	-
dc.date.issued	2013-01-01	en_US
dc.identifier.isbn	978-1-55752-973-2	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/128501	-
dc.description.abstract	A 4.4 % RF-sputtered Cu2ZnSnSe4 thin film solar cell was studied by transmittance electron microscopy (TEM) and photoluminescence (PL). The result reveals non-uniform elemental distribution and large potential fluctuation mainly induced by Cu-Zn defect.	en_US
dc.language.iso	en_US	en_US
dc.title	Investigation of Cu-Zn Point Defect on the Photovaltaic Performance of the RF-Sputtered Cu2ZnSnSe4-Based Thin Film Solar Cell	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000355262502253	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper