The Crystalline and Optical Properties of (11(2)over-bar2) Semipolar GaN and InGaN/GaN MQWs on (1(1)over-bar00) M-Sapphire

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DC Field	Value	Language
dc.contributor.author	Li, Yun-Jing	en_US
dc.contributor.author	Chang, Shih-Pang	en_US
dc.contributor.author	Sou, Kuok-Pan	en_US
dc.contributor.author	Chang, Jet-Rung	en_US
dc.contributor.author	Chang, Ruey-Wen	en_US
dc.contributor.author	Chang, Chun-Yen	en_US
dc.contributor.author	Cheng, Yuh-Jen	en_US
dc.date.accessioned	2015-12-02T03:00:52Z	-
dc.date.available	2015-12-02T03:00:52Z	-
dc.date.issued	2013-01-01	en_US
dc.identifier.isbn	978-1-55752-973-2	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/128503	-
dc.description.abstract	We report the growth temperature effect on the crystalline and optical properties of (11 (2) over bar2) semipolar GaN and InGaN/GaN MQWs. It shows that a lower growth temperature at 1020 degrees C produces better crystalline and optical properties.	en_US
dc.language.iso	en_US	en_US
dc.title	The Crystalline and Optical Properties of (11(2)over-bar2) Semipolar GaN and InGaN/GaN MQWs on (1(1)over-bar00) M-Sapphire	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000355262504247	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper