First-principles Calculations on the Schottky Barrier Height of the NiGe/n-type Ge Contact with Dopant Segregation

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Han-Chi	en_US
dc.contributor.author	Lin, Chiung-Yuan	en_US
dc.contributor.author	Shih, Che-Ju	en_US
dc.contributor.author	Tsui, Bing-Yue	en_US
dc.date.accessioned	2015-12-02T03:00:53Z	-
dc.date.available	2015-12-02T03:00:53Z	-
dc.date.issued	2014-01-01	en_US
dc.identifier.isbn	978-1-4799-4780-5	en_US
dc.identifier.issn	2378-8593	en_US
dc.identifier.uri	http://hdl.handle.net/11536/128522	-
dc.description.abstract	Effects of dopant segregation at the NiGe/Ge interface are analyzed theoretically and experimentally. First-principles calculations indicate that the physical Schottky barrier height would be reduced by the segregation of As by 0.081 eV. This small value is due to the Fermi-level pinning effect. Further improvement of the contact resistance may be achieved by reducing the interface states.	en_US
dc.language.iso	en_US	en_US
dc.title	First-principles Calculations on the Schottky Barrier Height of the NiGe/n-type Ge Contact with Dopant Segregation	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2014 INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000358863600023	en_US
dc.citation.woscount	0	en_US
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