完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, Wei-Lingen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorChang, Chih-Kaien_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2015-12-02T03:00:57Z-
dc.date.available2015-12-02T03:00:57Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-2-87487-036-1en_US
dc.identifier.issnen_US
dc.identifier.urihttp://hdl.handle.net/11536/128586-
dc.description.abstractA V-band dual-conversion down-converter with the Schottky-diode first conversion mixer and the analog Gilbert second conversion mixer is demonstrated using 0.15-mu m pseudomorphic high electron mobility transistor (pHEMT) technology. The diode mixer based on quarter-wavelength design methodology occupies a reasonable real estate at millimeter-wave frequency while the analog IF mixer has the size advantage at low microwave frequency. A trifilar transformer is employed in the first mixer to have balanced RF/LO/IF signals for the anti-parallel diode-pairs while a Marchand balance converts the RF signal into the balanced one. Analog I/Q Gilbert mixers driven by the poly-phase filter in the LO port achieve precise I/Q IF output. As a result, this work achieves a wideband conversion gain around -1 dB from 54-64 GHz, -5 dBm of IP1dB, and 6 dBm of IIP3.en_US
dc.language.isoen_USen_US
dc.subjectMarchand balunen_US
dc.subjecttrifilar transformeren_US
dc.subjectpoly-phase filteren_US
dc.subjectdual-conversionen_US
dc.subjectdown-converteren_US
dc.subjectsub-harmonic mixeren_US
dc.titleV-band pHEMT Dual-Conversion Down-Converter With Schottky Diode RF Mixer and Analog Gilbert IF Mixeren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC)en_US
dc.citation.spage124en_US
dc.citation.epage127en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000361635500032en_US
dc.citation.woscount0en_US
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