完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tseng Tseung-Yuen | en_US |
dc.contributor.author | Hung Chung-Jung | en_US |
dc.contributor.author | Lin Pang | en_US |
dc.date.accessioned | 2015-12-04T07:03:16Z | - |
dc.date.available | 2015-12-04T07:03:16Z | - |
dc.date.issued | 2015-10-22 | en_US |
dc.identifier.govdoc | H01G011/36 | zh_TW |
dc.identifier.govdoc | H01G011/86 | zh_TW |
dc.identifier.govdoc | H01G011/46 | zh_TW |
dc.identifier.govdoc | H01G011/52 | zh_TW |
dc.identifier.govdoc | H01G011/58 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/128700 | - |
dc.description.abstract | A high energy density asymmetric pseudocapacitor includes a cathode plate, an anode plate, and a separator. The cathode plate includes a first conductive substrate and a porous cathode film formed on the first conductive substrate. The porous cathode film includes a carbon nano-tube network and a plurality of composite flakes. Each of the composite flakes contains graphene, a transition metal compound and carbon nano-tubes. The anode plate includes a second conductive substrate and an anode film formed on the second conductive substrate. The anode film contains graphene and carbon nano-tubes. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | HIGH ENERGY DENSITY ASYMMETRIC PSEUDOCAPACITOR AND METHOD OF MAKING THE SAME | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20150302999 | zh_TW |
顯示於類別: | 專利資料 |