Effect of trimethylsilylation on the film stress of mesoporous silica ultralow-k film stacks

Abstract

The film stress of the ultralow-k mesoporous silica thin film and the alpha-SiC:H/ mesoporous silica film stack was studied. The as-calcined mesoporous silica exhibits a tensile film stress due to its volume contraction during bake and calcination. Trimethylsilylation of the mesoporous film results in a spring-back effect and thereby improves the mechanical properties of the porous film. Deposition of a plasma-assisted alpha-SiC:H layer on the mesoporous silica thin film can also relieve the tensile stress, and even made the film stack become compressively stressed. This is ascribed to the stress compensation and alkoxylation occurring during the alpha-SiC:H deposition.