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dc.contributor.authorHsu, Yu-Tingen_US
dc.contributor.authorLan, Wen-Howen_US
dc.contributor.authorHuang, Kai-Fengen_US
dc.contributor.authorLin, Jia-Chingen_US
dc.contributor.authorChang, Kuo-Jenen_US
dc.date.accessioned2016-03-28T00:04:05Z-
dc.date.available2016-03-28T00:04:05Z-
dc.date.issued2016-01-15en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physb.2015.10.031en_US
dc.identifier.urihttp://hdl.handle.net/11536/129325-
dc.description.abstractIn this study, the spray pyrolysis method was used to prepare unintentionally doped and nitrogen-doped calcium zinc oxide films by using zinc acetate, calcium nitrate precursor, and ammonium acetate precursor. Morphological and structural analyses were conducted using scanning electron microscopy and X-ray diffraction. The results indicated that film grain size decreased as the nitrogen doping was increased. Both calcium oxide and zinc oxide structures were identified in the unintentionally doped calcium zinc oxide. When nitrogen doping was introduced, the film mainly exhibited a zinc oxide structure with preferred (002) and (101) orientations. The concentration and mobility were investigated using a Hall measurement system. P-type films with a mobility and concentration of 10.6 cm(2) V-1 s(-1) and 2.8 x 10(17) cm(-3), respectively, were obtained. Moreover, according to a temperature-dependent conductivity analysis, an acceptor state with activation energy 0.266 eV dominated the p-type conduction for the unintentionally doped calcium zinc oxide. By contrast, a grain boundary with a barrier height of 0.274-0.292 eV dominated the hole conduction for the nitrogen-doped calcium zinc oxide films. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectNanocrystalline materialsen_US
dc.subjectCalcium zinc oxideen_US
dc.subjectSpray pyrolysisen_US
dc.subjectElectrical propertiesen_US
dc.subjectThin filmsen_US
dc.titleConductivity study of nitrogen-doped calcium zinc oxide prepared by spray pyrolysisen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.physb.2015.10.031en_US
dc.identifier.journalPHYSICA B-CONDENSED MATTERen_US
dc.citation.volume481en_US
dc.citation.spage63en_US
dc.citation.epage66en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000365888800010en_US
dc.citation.woscount0en_US
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