完整後設資料紀錄
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dc.contributor.authorTong, Shih-changen_US
dc.contributor.authorWang, Jyh-Shyangen_US
dc.contributor.authorWu, Chii-Binen_US
dc.contributor.authorWu, Chih-Hungen_US
dc.contributor.authorChang, Jung-Tingen_US
dc.contributor.authorWei, Pai-Chunen_US
dc.date.accessioned2016-03-28T00:04:06Z-
dc.date.available2016-03-28T00:04:06Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn0927-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.solmat.2015.09.047en_US
dc.identifier.urihttp://hdl.handle.net/11536/129329-
dc.description.abstractThe CuPtB ordering and the antiphase boundaries (APBs) in GaInP2 epifilms were found to be diminished by the addition of the surfactant antimony (Sb) during the epitaxy. This is evidenced by the disappearance of the APBs related deep level peak in the Raman and photoluminescence (PL) spectra, as well as the significantly increased lifetime of the minority carriers. The GaInP2/metamorphic (MM)-GaInAs/Ge multi-junction solar cells made by this method possess enhanced short circuit current density and show a narrower distribution of the open circuit voltage. We believe the use of surfactant Sb to control APBs during the growth of InGaP2 would be very useful for designing GaInP2-based devices, such as solar cells, laser diodes and light-emitting diodes. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSolar cellsen_US
dc.subjectAntiphase boundaryen_US
dc.subjectSurfactantsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectTime resolved spectroscopyen_US
dc.titleThe reduction of antiphase boundary defects by the surfactant antimony and its application to the III-V multi-junction solar cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.solmat.2015.09.047en_US
dc.identifier.journalSOLAR ENERGY MATERIALS AND SOLAR CELLSen_US
dc.citation.volume144en_US
dc.citation.spage418en_US
dc.citation.epage421en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000366223900053en_US
dc.citation.woscount0en_US
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