Low Interface Trap Densities and Enhanced Performance of AlGaN/GaNMOS High-Electron Mobility Transistors Using Thermal Oxidized Y2O3 Interlayer

Abstract

AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with Y2O3 interlayer have been investigated to improve the interface quality. With the HfO2/Y2O3 stack gate dielectrics, the devices show a saturated drain current density of up to similar to 943 mA/mm. Meanwhile, the pulsed I-d-V-g measurement indicates interface traps are as low as 5.2 x 10(11) cm(-2), and the pulsed-IV measurement exhibits great resistance to current collapse. Furthermore, the devices also present good reliability under negative bias stress. Therefore, the interface engineering based on Y2O3 has a potential to open up a new avenue to high-performance AlGaN/GaN MOS-HEMTs.