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dc.contributor.authorHu, Yu-Chenen_US
dc.contributor.authorLin, Chun-Pinen_US
dc.contributor.authorChang, Yao-Jenen_US
dc.contributor.authorChang, Nien-Shyangen_US
dc.contributor.authorSheu, Ming-Hwaen_US
dc.contributor.authorChen, Chi-Shien_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2016-03-28T00:04:08Z-
dc.date.available2016-03-28T00:04:08Z-
dc.date.issued2015-12-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2015.2487041en_US
dc.identifier.urihttp://hdl.handle.net/11536/129354-
dc.description.abstractA novel 3-D chip-level heterogeneous integration scheme for low cost and rapid pilot demonstration is proposed in this paper. The conventional Bumping fabrication is done at wafer level. However, due to the high cost of whole wafer, opting for chips with advanced technology node is a better alternative. Therefore, with the difficulties of the bumping process at chip level, 3-D heterogeneous integration by chip stacking faces challenges. This paper presents a novel heterogeneous integration platform by using electroless plating on chips and pillar bump on wafers before stacking. This integration platform can be applied to chip-to-chip or chip-to-wafer scheme when chips are fabricated from costly advanced technology node.en_US
dc.language.isoen_USen_US
dc.subject3-D integrationen_US
dc.subjectheterogeneousen_US
dc.titleA Novel Flexible 3-D Heterogeneous Integration Scheme Using Electroless Plating on Chips With Advanced Technology Nodeen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2015.2487041en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume62en_US
dc.citation.issue12en_US
dc.citation.spage4343en_US
dc.citation.epage4348en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000365225700063en_US
dc.citation.woscount0en_US
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