完整後設資料紀錄
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dc.contributor.authorLoc, Welley Siuen_US
dc.contributor.authorQuan, Zeweien_US
dc.contributor.authorLin, Cuikunen_US
dc.contributor.authorPan, Jinfongen_US
dc.contributor.authorWang, Yuxuanen_US
dc.contributor.authorYang, Kaikunen_US
dc.contributor.authorJian, Wen-Binen_US
dc.contributor.authorZhao, Boen_US
dc.contributor.authorWang, Howarden_US
dc.contributor.authorFang, Jiyeen_US
dc.date.accessioned2016-03-28T00:04:14Z-
dc.date.available2016-03-28T00:04:14Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn2040-3364en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c5nr04181cen_US
dc.identifier.urihttp://hdl.handle.net/11536/129445-
dc.description.abstractNanostructured lead sulphide is a significant component in a number of energy-related sustainable applications such as photovoltaic cells and thermoelectric components. In many micro-packaging processes, dimensionality-controlled nano-architectures as building blocks with unique properties are required. This study investigates different facet-merging growth behaviors through a wet-chemical synthetic strategy to produce high-quality controlled nanostructures of lead sulphide in various dimensionalities. It was found that 1D nanowires or 2D nanosheets can be obtained by the merging of reactive {111}- or {110}-facets, respectively, while promoting {100} facets in the early stages after nucleation leads to the growth of 0D nanocubes. The influence of temperature, capping ligands and co-solvent in facilitating the crystal facet growth of each intermediate seed is also demonstrated. The novelty of this work is characterized by the delicate manipulation of various PbS nanoarchitectures based on the comprehension of the facet-merging evolution. The synthesis of facet-controlled PbS nanostructures could provide novel building blocks with desired properties for use in many applications.en_US
dc.language.isoen_USen_US
dc.titleFacet-controlled facilitation of PbS nanoarchitectures by understanding nanocrystal growthen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c5nr04181cen_US
dc.identifier.journalNANOSCALEen_US
dc.citation.issue45en_US
dc.citation.spage19047en_US
dc.citation.epage19052en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000364852500028en_US
dc.citation.woscount0en_US
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