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dc.contributor.authorWu, Wen-Haoen_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorHou, Tzu-Chingen_US
dc.contributor.authorLin, Tai-Weien_US
dc.contributor.authorHsu, Hisang-Huaen_US
dc.contributor.authorWong, Yuen-Yeeen_US
dc.contributor.authorIwai, Hiroshien_US
dc.contributor.authorKakushima, Kuniyukien_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2016-03-28T00:04:17Z-
dc.date.available2016-03-28T00:04:17Z-
dc.date.issued2016-01-08en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el.2015.1087en_US
dc.identifier.urihttp://hdl.handle.net/11536/129495-
dc.description.abstractThe use of a high k composite dielectric composed of La2O3 and HfO2 layers as the gate dielectric for In0.53Ga0.47As MOS application is proposed. Two multi-layer structures of La2O3 (1 nm)/HfO2 (1 nm) and La2O3 (0.5 nm)/HfO2 (0.5 nm) were deposited and annealed at 450 and 500 degrees C for device performance comparison. X-ray photoelectron spectroscopy, TEM and C-V measurements were used for the interface analysis between the oxide and the semiconductor. Finally, a 1 nm equivalent-oxide-thickness dielectric with small hysteresis of 88 mV and D-it of 1.9 x 10(12) cm(-2) eV(-1) was achieved for six layers of an La2O3 (0.5 nm)/HfO2 (0.5 nm) composite oxide structure on an In0.53Ga0.47As MOS capacitor with a post-deposition annealing temperature of 450 degrees C.en_US
dc.language.isoen_USen_US
dc.titleDemonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitoren_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el.2015.1087en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume52en_US
dc.citation.spage59en_US
dc.citation.epage60en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department影像與生醫光電研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Imaging and Biomedical Photonicsen_US
dc.identifier.wosnumberWOS:000367750500031en_US
dc.citation.woscount0en_US
Appears in Collections:Articles