標題: Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitor
作者: Wu, Wen-Hao
Lin, Yueh-Chin
Hou, Tzu-Ching
Lin, Tai-Wei
Hsu, Hisang-Hua
Wong, Yuen-Yee
Iwai, Hiroshi
Kakushima, Kuniyuki
Chang, Edward Yi
材料科學與工程學系
光電系統研究所
影像與生醫光電研究所
Department of Materials Science and Engineering
Institute of Photonic System
Institute of Imaging and Biomedical Photonics
公開日期: 8-Jan-2016
摘要: The use of a high k composite dielectric composed of La2O3 and HfO2 layers as the gate dielectric for In0.53Ga0.47As MOS application is proposed. Two multi-layer structures of La2O3 (1 nm)/HfO2 (1 nm) and La2O3 (0.5 nm)/HfO2 (0.5 nm) were deposited and annealed at 450 and 500 degrees C for device performance comparison. X-ray photoelectron spectroscopy, TEM and C-V measurements were used for the interface analysis between the oxide and the semiconductor. Finally, a 1 nm equivalent-oxide-thickness dielectric with small hysteresis of 88 mV and D-it of 1.9 x 10(12) cm(-2) eV(-1) was achieved for six layers of an La2O3 (0.5 nm)/HfO2 (0.5 nm) composite oxide structure on an In0.53Ga0.47As MOS capacitor with a post-deposition annealing temperature of 450 degrees C.
URI: http://dx.doi.org/10.1049/el.2015.1087
http://hdl.handle.net/11536/129495
ISSN: 0013-5194
DOI: 10.1049/el.2015.1087
期刊: ELECTRONICS LETTERS
Volume: 52
起始頁: 59
結束頁: 60
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